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| BCP49 NPN Silicon Darlington Transistors * For general AF applications * High collector current * High current gain * Pb-free 4 2 1 3 (RoHS compliant) package 1) * Qualified according AEC Q101 C(2,4) B(1) E(3) EHA00009 Type BCP49 Maximum Ratings Parameter Marking BCP 49 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO Values 60 80 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S = 124 C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 1.5 150 -65 ... 150 17 mA mA W C Junction - soldering point2) RthJS K/W 1Pb-containing package may be available upon special request 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-27 BCP49 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, V CE = 5 V DC current gain 1) IC = 500 mA, V CE = 5 V 1) Pulse test: t 300s, D = 2% Unit max. 100 10 100 nA A nA V typ. - V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO IEBO hFE hFE hFE hFE 60 80 10 2000 4000 10000 2000 2 2007-04-27 BCP49 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t 300s, D = 2% Symbol min. VCEsat VBEsat - Values typ. max. 1 1.5 Unit V fT Ccb - 200 6.5 - MHz pF 3 2007-04-27 BCP49 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (TA) VCB = VCEmax 1650 10 4 BCP 29/49 EHP00251 mW CBO 1350 1200 nA max 10 3 Ptot 1050 900 750 600 450 300 150 0 0 10 2 typ 10 1 10 0 15 30 45 60 75 90 105 120 C 150 TS 0 50 100 C TA 150 Transition frequency fT = f (IC) VCE = 5V 10 3 fT BCP 29/49 EHP00252 Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCP 29/49 EHP00253 MHz D= tp T tp T 10 2 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 1 10 2 mA 10 3 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 C 4 2007-04-27 BCP49 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 BCP 29/49 EHP00255 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 1000 10 3 BCP 29/49 EHP00256 C mA 150 C 25 C -50 C 10 5 5 125 C 25 C 10 2 5 -55 C 10 4 5 10 1 5 10 3 10 -1 10 0 10 1 10 2 mA 10 3 10 0 0 0.5 1.0 V V CEsat 1.5 C Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 160 pF Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 10 3 BCP 29/49 EHP00258 C mA 150 C 25 C -50 C CCB0(CEB0) 120 10 2 100 5 80 60 CEB 10 1 5 40 CCB 20 0 0 10 0 4 8 12 16 20 24 28 V 34 VCB0(VEB0 0 1.0 2.0 V V BEsat 3.0 5 2007-04-27 Package SOT223 BCP49 Package Outline A 6.5 0.2 3 0.1 4 1.60.1 0.1 MAX. 15 MAX. B 3.5 0.2 1 2 3 7 0.3 0.7 0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 0.04 0...10 Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 6 2007-04-27 BCP49 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-27 |
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